Suche

Trap-state mapping to model GaN transistors dynamic performance

€ 21.50 · 5 (235) · Auf Lager

AN003-Using Enhancement Mode GaN-on-Silicon Power FETs

Identification of Star Defects in Gallium Nitride with HREBSD and ECCI, Microscopy and Microanalysis

Electronics, Free Full-Text

PDF) Trap-state mapping to model GaN transistors dynamic performance

Trapping phenomena and degradation mechanisms in GaN-based power HEMTs - ScienceDirect

Trapping phenomena and degradation mechanisms in GaN-based power HEMTs - ScienceDirect

3D NAND fash and FeFET in the data storage roadmap

A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

Electronics, Free Full-Text

Dynamic ON-Resistance Measurement Techniques for GaN Power Transistors - Technical Articles

Accurately Measuring High Speed GaN Transistors - EE Times Asia

Electronics, Free Full-Text

Full article: Application of phase-change materials in memory taxonomy