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AN003-Using Enhancement Mode GaN-on-Silicon Power FETs
Identification of Star Defects in Gallium Nitride with HREBSD and ECCI, Microscopy and Microanalysis
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PDF) Trap-state mapping to model GaN transistors dynamic performance
Trapping phenomena and degradation mechanisms in GaN-based power HEMTs - ScienceDirect
Trapping phenomena and degradation mechanisms in GaN-based power HEMTs - ScienceDirect
3D NAND fash and FeFET in the data storage roadmap
A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors
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Dynamic ON-Resistance Measurement Techniques for GaN Power Transistors - Technical Articles
Accurately Measuring High Speed GaN Transistors - EE Times Asia
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Full article: Application of phase-change materials in memory taxonomy